IndiumV3, Chine, Analysis, bibRecord, 000242

Growth of metamorphic InGaP layers on GaAs substrates

Identifieur interne : 000242 ( Chine/Analysis ); précédent : 000241; suivant : 000243

Growth of metamorphic InGaP layers on GaAs substrates

Auteurs : RBID : Pascal:13-0288246

Descripteurs français

Pascal (Inist)
- Mécanisme croissance, Méthode GSMBE, Epitaxie jet moléculaire, Optimisation, Indium, Rugosité, Photoluminescence, Puits quantique, Nanomatériau, Semiconducteur III-V, Composé III-V, Point quantique, Dislocation filetée, Effet contrainte, Arséniure d'indium, Arséniure de gallium, Phosphure, InGaP, Substrat GaAs, In, InGaAs, InAs, 8110A, 8115H, 7855, 8107.

English descriptors

KwdEn :
- GSMBE method, Gallium arsenides, Growth mechanism, III-V compound, III-V semiconductors, Indium, Indium arsenides, Molecular beam epitaxy, Nanostructured materials, Optimization, Phosphides, Photoluminescence, Quantum dots, Quantum wells, Roughness, Stress effects, Threading dislocation.

Abstract

We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations.

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to stream Main, to step Corpus: 000835
to stream Main, to step Repository: 000C26
to stream Chine, to step Extraction: 000242

Links to Exploration step

Pascal:13-0288246

Le document en format XML

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<author><name sortKey="Yan, J Y" uniqKey="Yan J">J. Y. Yan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
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<author><name sortKey="Gong, Q" uniqKey="Gong Q">Q. Gong</name>
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<author><name sortKey="Yue, L" uniqKey="Yue L">L. Yue</name>
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<author><name sortKey="Liu, Q B" uniqKey="Liu Q">Q. B. Liu</name>
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<author><name sortKey="Wang, Y" uniqKey="Wang Y">Y. Wang</name>
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<author><name sortKey="Wang, S M" uniqKey="Wang S">S. M. Wang</name>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Microtechnology, Chalmers University of Technology</s1>
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<s3>SWE</s3>
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<country>Suède</country>
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<publicationStmt><idno type="inist">13-0288246</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0288246 INIST</idno>
<idno type="RBID">Pascal:13-0288246</idno>
<idno type="wicri:Area/Main/Corpus">000835</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>GSMBE method</term>
<term>Gallium arsenides</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Optimization</term>
<term>Phosphides</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Quantum wells</term>
<term>Roughness</term>
<term>Stress effects</term>
<term>Threading dislocation</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term>
<term>Méthode GSMBE</term>
<term>Epitaxie jet moléculaire</term>
<term>Optimisation</term>
<term>Indium</term>
<term>Rugosité</term>
<term>Photoluminescence</term>
<term>Puits quantique</term>
<term>Nanomatériau</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Dislocation filetée</term>
<term>Effet contrainte</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Phosphure</term>
<term>InGaP</term>
<term>Substrat GaAs</term>
<term>In</term>
<term>InGaAs</term>
<term>InAs</term>
<term>8110A</term>
<term>8115H</term>
<term>7855</term>
<term>8107</term>
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<front><div type="abstract" xml:lang="en">We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations.</div>
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<fC01 i1="01" l="ENG"><s0>We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations.</s0>
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<fC02 i1="01" i2="3"><s0>001B80A10A</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>05</s5>
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<s2>NC</s2>
<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>09</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
</fC03>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Phosphure</s0>
<s2>NA</s2>
<s5>29</s5>
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<s2>NA</s2>
<s5>29</s5>
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<s4>INC</s4>
<s5>46</s5>
</fC03>
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<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>8110A</s0>
<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="24" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>72</s5>
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<s4>INC</s4>
<s5>73</s5>
</fC03>
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<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>273</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
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</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1>
<s2>17</s2>
<s3>Nara JPN</s3>
<s4>2012-09-23</s4>
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   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:13-0288246
   |texte=   Growth of metamorphic InGaP layers on GaAs substrates
}}

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Growth of metamorphic InGaP layers on GaAs substrates

Growth of metamorphic InGaP layers on GaAs substrates

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